Hybrid on-chip and package antenna

ABSTRACT

Antenna devices, antenna systems and methods of their fabrication are disclosed. One such antenna device includes a semiconductor chip and a chip package. The semiconductor chip includes at least one antenna that is integrated into a dielectric layer of the semiconductor chip and is configured to transmit electromagnetic waves. In addition, the chip package includes at least one ground plane, where the semiconductor chip is mounted on the chip package such that the ground plane(s) is disposed at a predetermined distance from the antenna to implement a reflection of at least a portion of the electromagnetic waves.

RELATED APPLICATION INFORMATION

This application claims priority to provisional application Ser. No.61/699,899 filed on Sep. 12, 2012, incorporated herein by reference.

BACKGROUND

Technical Field

The present invention relates to antenna devices, and, moreparticularly, to on-chip antenna structures and methods of manufacturingon-chip antenna structures.

Description of the Related Art

Antennas for devices that employ wireless communication havetraditionally been formed off-chip and subsequently coupled to anintegrated circuit. However, as the size of communication devices havebeen scaled down over the years, there has been an increasing demand formore compact antenna structures. While specialized board technologiesmay be used to fabricate antennas therein, they are often unsuitable forcertain applications. For example, for devices that employ frequenciesof 60 GHz or higher, the design of antenna into specialized boardtechnologies are quit challenging, as the tolerances of the boardtechnologies are several orders of magnitude higher than microelectronictechnologies. Transmitting the millimeter wave signal outside of thechip up to the antenna presents another significant challenge. Thus, onepopular means of fabricating antenna devices integrates the antennaon-chip into microelectronic silicon structures.

The current state of the art of integrating antenna into amicroelectronic silicon technology, for both RF and mm wave frequencies,provides structures that have a relatively low efficiency due to theloss of transmissions into a lossy silicon substrate and due to the factthat the antenna ground cannot be placed at a sufficient distance awayfrom the antenna. For example, microelectronic silicon structuresprovide a limited distance (less than 15 μm) between the last layer ofmetal in which the antenna is situated and the first layer of metalwhere the ground plane is integrated. As such, state of the art on-chipantennas exhibit lower efficiency and provide a narrower bandwidth thanantennas designed into specialized technologies. Further, their productapplications are very limited.

SUMMARY

One embodiment of the principles is directed to an antenna deviceincluding a semiconductor chip and a chip package. The semiconductorchip includes at least one antenna that is integrated into a dielectriclayer of the semiconductor chip and is configured to transmitelectromagnetic waves. In addition, the chip package includes at leastone ground plane, where the semiconductor chip is mounted on the chippackage such that the ground plane(s) is disposed at a predetermineddistance from the antenna to implement a reflection of at least aportion of the electromagnetic waves.

An alternative embodiment is directed to a method for fabricating anantenna device for microwave transmissions. The method includes formingan antenna structure including at least one antenna that is integratedinto a dielectric layer of a semiconductor chip and is configured totransmit electromagnetic waves having a microwave wavelength (λ). Inaddition, a ground plane structure is formed separately from the antennastructure. Here, the ground plane structure includes at least oneintegrated ground plane that is configured to reflect theelectromagnetic waves. Further, the antenna structure is mounted to theground plane structure such that the ground plane(s) is at a distance(d) of

${\frac{1}{20}\lambda} < d \leq {\frac{1}{4}\lambda}$from the antenna(s).

Another embodiment is directed to an antenna system. The system includesa plurality of semiconductor chips on a wafer, where each of thesemiconductor chips includes at least one antenna that is integratedinto a dielectric layer of the semiconductor chip and is configured totransmit electromagnetic waves. The system further comprises awafer-scale chip package that includes ground planes, where thesemiconductor chips and the wafer are mounted on the chip package suchthat the ground planes are disposed at predetermined distances from theantennas of the semiconductor chips to implement a reflection of atleast a portion of the electromagnetic waves.

Another embodiment is directed to a method for fabricating an antennadevice. In accordance with the method, at least one antenna is formed inan antenna layer structure including antenna components and a substratematerial. Further, the antenna layer structure is transported onto atransparent support structure. At least part of the substrate materialis removed to form an antenna chip layer and the antenna chip layer isattached to a glass wafer. The transparent support structure is releasedfrom the antenna chip layer and the antenna chip layer is mounted onto acarrier layer including at least one integrated ground plane.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a block/flow diagram of a method for fabricating an antennadevice in accordance with an exemplary embodiment;

FIG. 2 a block/flow diagram of a method for forming an antenna structurein accordance with an exemplary embodiment;

FIG. 3 is a cross-sectional view of an exemplary antenna deviceincluding a high-resistivity cap in accordance with an exemplaryembodiment;

FIG. 4 is a cross-sectional view of an exemplary antenna deviceincluding a semiconductor cap in accordance with an exemplaryembodiment;

FIG. 5 is a cross-sectional view of an exemplary antenna deviceincluding a lens cap in accordance with an exemplary embodiment;

FIG. 6 is a cross-sectional view of an exemplary antenna deviceincluding a semiconductor cap formed from a bulk semiconductor materialin accordance with an exemplary embodiment;

FIG. 7 is a cross-sectional view of an exemplary antenna deviceincluding an antenna structure that is directly bonded to a package inaccordance with an exemplary embodiment;

FIG. 8 is a cross-sectional view of an exemplary antenna device that isfabricated with 3D integration technology in accordance with anexemplary embodiment;

FIG. 9 is a block/flow diagram of a method for forming a ground planestructure illustrated in FIG. 8 in accordance with an exemplaryembodiment;

FIG. 10 is a cross-sectional top view of wafer-scale antenna system witha large antenna array in accordance with an exemplary embodiment; and

FIG. 11 illustrates cross-sectional views of various structures formedduring stages of the method of FIG. 2.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The preferred embodiments described herein are directed to on-chipantennas that provide both a broadband and a high transmissionefficiency. In particular, the embodiments described herein employ ahybrid antenna system that is integrated in both a semiconductor chip ofan integrated circuit and in the chip package. For example, as discussedherein below, antennas can be formed within a semiconductor chip, whilea ground plane can be formed within the chip package. Here, an optimalspacing for reflection purposes can be implemented through the use ofelectrical couplers or through appropriate etching of a substrate of thesemiconductor chip. Thus, in contrast to the microelectronic silicontechnologies and specialized board technologies described above, thehybrid systems described herein can achieve an optimal and accuratespacing between antennas and a ground plane. Moreover, as discussed inmore detail herein below, the efficiency can be further improved byemploying a highly transparent cap as opposed to lossy silicon materialsused in current fabrication methods.

As will be appreciated by one skilled in the art, aspects of the presentinvention may be embodied as a system, method or device. Aspects of thepresent invention are described below with reference to flowchartillustrations and/or block diagrams of methods, apparatus (systems) anddevices according to embodiments of the invention.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods and devices according to various embodiments of thepresent invention. It should also be noted that, in some alternativeimplementations, the features noted in the blocks may occur out of theorder noted in the figures. For example, two method blocks shown insuccession may, in fact, be executed substantially concurrently, or theblocks may sometimes be executed in the reverse order, depending uponthe functionality involved.

It is to be understood that the present invention will be described interms of a given illustrative architecture having a wafer; however,other architectures, structures, substrate materials and processfeatures and steps may be varied within the scope of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. Similarly, it will also be understood that when anelement described as a layer, region or substrate is referred to asbeing “beneath” or “under” another element, it can be directly beneaththe other element or intervening elements may also be present. Incontrast, when an element is referred to as being “directly beneath” or“directly under” another element, there are no intervening elementspresent. It will also be understood that when an element is referred toas being “connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Further, although the antenna “groundplane” is implemented in the board as a preferred embodiment hereinbelow, the “ground plane” can simply be a reflector, depending on theantenna design.

A design for an integrated circuit chip may be created in a graphicalcomputer programming language, and stored in a computer storage medium(such as a disk, tape, physical hard drive, or virtual hard drive suchas in a storage access network). If the designer does not fabricatechips or the photolithographic masks used to fabricate chips, thedesigner may transmit the resulting design by physical means (e.g., byproviding a copy of the storage medium storing the design) orelectronically (e.g., through the Internet) to such entities, directlyor indirectly. The stored design is then converted into the appropriateformat (e.g., GDSII) for the fabrication of photolithographic masks,which typically include multiple copies of the chip design in questionthat are to be formed on a wafer. The photolithographic masks areutilized to define areas of the wafer (and/or the layers thereon) to beetched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “λ/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, an exemplary method 100 forfabricating an antenna device is illustratively depicted. The method 100can begin at step 102, at which an antenna structure including one ormore antennas integrated within a semiconductor chip can be formed. Asnoted above, the efficiency of an antenna device can be improved byemploying a highly transparent cap as opposed to lossy silicon materialsused in current fabrication methods. For example, FIG. 2 provides a flowdiagram of an exemplary method 200 for forming the antenna structurewith such a cap that can be performed to implement step 102. Inaddition, FIG. 11 provides an illustration of the various stages andstructures formed in accordance with the method 200. FIG. 3 depicts amore detailed view of an exemplary antenna device 300 that can befabricated in accordance with the methods 100 and 200. In the device300, the antennas 306 are integrated on chip and the ground plane 312 isintegrated within the board or chip package to reflect theelectromagnetic waves toward the top of the chip. As illustrated in FIG.3, one or more antennas 306 can be formed in a silicon-on-insulator(SOI) structure, which includes an insulator layer 318 and asemiconductor substrate, such as a silicon substrate 1102 illustrated inFIG. 11. Here, the substrate material 1102 can be any low resistivitysubstrate material with, for example, a resistivity of less than 10Ohm·cm. Further, the antenna can be insulated with a dielectric material316. The antenna is coupled to antenna components 304 of an activedevice of an SOI circuit. In the FIG. 3 embodiment, an SOI circuit istransferred onto a glass substrate to form a Silicon On Glass (SOG)circuit. The glass substrate/carrier has the advantage of having a veryhigh resistivity with a low dielectric constant, thereby providinghigher efficiency and wider bandwidth antennas.

The method 200, in accordance with which the antenna structure 301 ofFIG. 3 can be formed and with which step 102 of the method 100 can beimplemented, can begin at step 202, at which one or more antennas areformed in an antenna layer structure. For example, as illustrated inFIG. 11, the SOI circuitry can be formed on a silicon wafer according tostandard processes resulting in a thin layer 1106, for example, 10microns, of active devices atop a thick silicon supporting substrate1102, for example, 500-750 microns. It should be noted that the waferscan be used in full form or segmented into chips by wafer dicing, forexample, less than one mm on a side and up to greater than 25 mm on aside. In a preferred embodiment, the chip sizes can, for example, varybetween 1×1 mm² and 25×25 mm².

At step 204, the antenna layer structure formed in step 202 can bemounted onto a transparent support structure. For example, asillustrated by structure 1100 of FIG. 11, the SOI chip or wafer,including a bulk silicon layer 1102, an insulator layer 1104 and adevice layer 1106, can be attached to a mechanical support wafer 1109using a polymer glue 1108 that is sensitive to a certain lightwavelength λ_(polymer). In a preferred embodiment, the adhesive 1108 iscoated on a borofloat glass 1109 and cured. The adhesive can be cured inan inert gas atmosphere prior to chip attachment/bonding to removevolatiles. In accordance with one exemplary embodiment, the polymer glue1108 can be a polyamide adhesive (e.g., HD-3007). The mechanical supportwafer 1109 used here is transparent at the light wavelength λ_(polymer).Thus, the mechanical support can be a glass wafer, as it is transparentto the laser light that is provided on the glue polymer. Glass has alsoa thermal coefficient of expansion that is close to that of silicon(used in the chip), which is advantageous to reduce stress duringprocess thermal cycles. Some other mechanical supports may be used, suchas, for example, sapphire, as long as they are transparent to the laserwavelength. The size of the mechanical glass substrate can be any sizefrom the chip size to a 200 mm, 300 mm, 450 mm wafer size. Further, thethickness of a polyimide adhesive 1108 on a glass carrier 1109 in thisembodiment is between 5-10 μm, pre-cure. The wafer or chips can beadhered to glass substrate with the adhesive layer 1108 by applyinguniform heat and pressure during the bond process to ensure that air isnot trapped in the bond. For example, the temperature can be elevated tothe reflow temperature of the adhesive, for example, 300° C. for 10minutes if the polyamide adhesive is used, and then cooled slowly toroom temperature.

At step 206, at least part of the substrate material can be etched toform an antenna chip layer or an antenna wafer layer. As noted above,the substrate material can be any low resistivity substrate materialwith, for example, a resistivity of less than 10 Ohm·cm. As illustratedby structures 1100 and 1110 of FIG. 11, the chip back-side substrate ofa single chip or of multiple chips on the antenna wafer layer can beetched away using mechanical polishing/etching and/or chemical etchingand/or plasma etching. Exposed edges of the chip(s) should be protectedprior to etching with a resist to prevent side etching and undercuttingof silicon, or any other semiconductor material used, within the devicecircuitry during etching. The etching can be implemented using XeF₂ gas.A complete silicon etch can involve removal of the silicon repeatedlyusing between 400-1000 “cycles,” depending on thickness of silicon andsquare area, until the back side of the SOI circuitry is exposed. Theetch rate is silicon-volume dependent. Generally, a single cycle time is˜30 seconds. An advantage of using an SOI structure is that the siliconchemical or plasma etching is very selective with respect to SiO₂ of theinsulator layer 318, enabling the etching process to be stoppedautomatically at the appropriate distance without damaging the activedevices 304 integrated into the silicon film and isolated from thesubstrate by the SiO₂ box 318.

At step 208, the antenna chip layer or the antenna wafer layer can beattached to a high resistivity material 320. For example, the chip orwafer that is attached to the mechanical support wafer may then beattached to a transparent wafer, such as glass, or any material with ahigh resistivity of, for example, greater than 10 Ohm·cm. Use of a highresistivity material in this case is important, as its purpose is toreduce electrical signal losses. In a preferred embodiment, thetransparent wafer can be made of any material with a relatively lowdielectric constant along with a high transparency. For example, thetransparent wafer 320 can be glass with a dielectric constant of∈_(r)=4. In the particular example illustrated in FIG. 3, the dielectricconstant (∈) of the insulator 318 is ∈_(r)=3.9, while the dielectricconstant of dielectric layer 316 is 2≦∈_(r)≦3.9. In addition, thedielectric constant of the chip package 314 is 2≦∈_(r)≦6. As illustratedby structures 1120 and 1130 of FIG. 11, to attach the antenna chip layeror the antenna wafer layer to the high resistivity material 320 or 1122,which can be borofloat glass, the material 320 or 1122 can be coatedwith an adhesive layer 1124, such as the polyamide adhesive describedabove with respect to step 204, with a thickness of, for example, 2-3μm. As discussed above with respect to step 204, the adhesive can becured in the same way in an inert gas atmosphere prior to chip/waferbonding to remove volatiles. The exposed SOI bottom layer 1104 can thenbe placed onto the adhesive layer 1124 on the high resistivity material1122, ensuring air is not trapped. Any voids can cause device fracturingeither during bonding or during laser release. As discussed above withrespect to step 204, this can be accomplished by applying uniform heatand pressure during the bonding process. For example, the temperaturecan be elevated to the reflow temperature of the adhesive, for example,300° C. for 10 minutes under a pressure of greater than 10 PSI if thepolyamide adhesive is used, and then cooled slowly to room temperatureto form the bond between the high resistivity material 320/1122 and thedevice layer 1106.

At step 210, the transparent support structure can be released from theantenna chip layer. For example, as illustrated by structure 1140 ofFIG. 11, the mechanical support can be released from the circuit orwafer by illuminating the support and polymer adhesive with a lighthaving a wavelength λ_(polymer) to which the adhesive is sensitive. Forexample, the adhesive 1108 can be irradiated through the support wafer1109 with an appropriate laser wavelength and energy to break the bondbetween the support wafer 1109 and the adhesive layer 1108. For example,a 308 nm laser at 500 mJ, at 16%-18%, power can be used if a polyamideadhesive is employed as adhesive layer 1108. In this example, fourpasses of the laser should be sufficient to break the bond. The carrier1109 can then be removed from the device layer 1106 and the adhesivelayer 1108 residue can be cleaned by reactive ion etching or chemicalcleaning to expose the original top of the SOI circuitry of the devicelayer 1106. For example, nitride masked polishing can be employed toremove the adhesive residue. As indicated above, FIG. 3 illustrates anexample of the resulting antenna structure 301 that can be formed inaccordance with the method 200.

Returning to FIG. 1, the method 100 may proceed to step 104, at which aground plane structure is separately formed. The ground plane structurecan include one or more integrated ground planes that are configured toreflect the electromagnetic waves 302 emitted by the antenna(s) formedat step 102 toward the top of the chip. For example, as illustrated inFIG. 3, the ground plane 312 can be formed and integrated into a chippackage 314, such as a printed circuit board. The ground plane can befabricated by using a metal layer on top or inside the board layer. Theboard can be the widely used FR4 material or some other board material,and the metal can be copper or any other metal, such as aluminum, gold,etc.

At step 106, the antenna structure 301 can be mounted to the groundplane structure 314. For example, as illustrated in FIG. 3, the SOGcircuit or wafer can be flip-chipped to the board 314 using a C4 or Cupillar process. For example, the SOG circuit can be mounted to thecarrier layer 314 with a connector 310 providing a ground for theantenna 306 and a connector 308 providing power and a signal to the IC304. In accordance with various embodiments, the connectors 310 and 308can, for example, be electrically conductive connectors, such as, forexample, C4 or Cu pillar connectors. It should be noted that themounting of the antenna structure 301 can implement a transfer of asingle chip or a transfer of a full wafer. The full wafer transfer andits attachment to a board with, for example, C4, permits wafer-scaleintegration of large phase array chips and antennas. As illustrated inFIG. 3, the glass substrate 320 is disposed above the antenna(s) 306 ona side of the semiconductor chip 301 that opposes a side of thesemiconductor chip by which the semiconductor chip is mounted on thechip package 314.

At step 108, the fabrication of the device can be completed. Forexample, a plurality of the devices 300 can be fabricated on a singlewafer, which, optionally, can then be cut and separately integrated inwireless communication systems.

In the specific example illustrated in FIG. 3, the glass substratethickness is between 50 and 700 μm. The antenna length is between λ/8and λ, where λ is the electromagnetic wavelength. For example, for a 60GHz signal, the wavelength is 2.5 mm, assuming the antenna is surroundedby a material with a dielectric constant of 4 (glass). Therefore, theantenna length in this embodiment is between 313 μm and 2.5 mm. In orderto design a broadband antenna with good efficiency, the ground planemay, at step 106 of the method 100, be placed at a distance of about λ/4below the antenna to achieve an optimal reflection. However, thedistance (d) between the ground planes and the antennas should bebetween

${\frac{1}{20}\lambda} < d \leq {\frac{1}{4}\lambda}$to achieve a relatively high efficiency with an acceptable bandwidth ofat least 12% of the resonant frequency of the antennas. Thepredetermined distance or spacing between the antenna(s) 306 and theground plane(s) 312 can be achieved by appropriately dimensioning theconnectors 308 and 310.

For example, for a 60 GHz signal, the ground plane may be placed 625 μmbelow the antenna. The C4 pillar height between chip and package variesaccording to the pitch. For 200 μm pitch C4s, the height may be between82 to 90 μm. For a 185.6 μm pitch, the C4 height may be 58 μm. With a 58μm distance between the ground plane and the antenna, a 646 GHzbroadband efficient antenna can be designed. Alternative knownmicro-bump technologies may offer a lower height, permitting the designof antennas working at even higher frequencies. On the lower frequencyside, the structure is mostly limited by the chip size, since the groundplane height can be increased by increasing the board thickness. Themaximum chip size is currently about 25 mm; therefore the theoreticallow frequency limit for the structure in the embodiment of FIG. 3 iscurrently 750 MHz.

It should be noted that the choice of the distance between the antennaand ground plane is important because it permits a trade-off betweenantenna bandwidth and efficiency. An approximate equation for the patchantenna bandwidth is given by:

$\frac{\Delta\; f}{f_{res}} = {1.2 \times \frac{d}{W}}$where Δf is the bandwidth, f_(res) is the resonant frequency of theantenna, d is the distance from the ground plane to the antenna and W isthe patch antenna width. Typically the patch antenna width W is equal toλ/2. For a 12% bandwidth, d is equal to W/10 or λ/20. For a frequencyapplication of 60 GHz and for a material with a dielectric constant∈_(r) of 4, the antenna width is 1250 μm, and the distance d from theground to the antenna is 125 μm. Wider antenna bandwidth can be achievedby bringing the ground plane further away, however the antennaefficiency will degrade.

For a typical on-chip antenna, the distance d from the ground to thesubstrate is typically 10 μm. For a minimum 12% bandwidth target, whichis typical for broadband applications, d is equal to W/10 or λ/20.Therefore the maximum wavelength is λ=200 μm for a target bandwidth of12%. Assuming a typical dielectric constant of 4 between the on-chipantenna and the ground plane, the minimum frequency that can be used foron-chip patch antenna with a ground plane integrated on the same chip is750 GHz with a 12% bandwidth. In accordance with exemplary embodimentsof the present invention described herein, the distance d to the groundplane is a free parameter, and the minimum frequency is limited by thesize of the chip reticule, which is typically 25 mm. For a 25 mm patchantenna, the wavelength λ=5 mm, and the distance between the antenna andthe ground plane is 2.5 mm for a 12% frequency bandwidth target. Theoperating antenna center frequency is 3 GHz. Therefore, with the hybridantenna integration described herein, frequency applications from 3 to700 GHz can be supported, as compared to on-chip antennas and groundplanes, which can only support frequency application of above 750 GHzfor broadband applications.

FIG. 4 illustrates an alternative embodiment 400 of an antenna device,which can also be fabricated in accordance with the method 100 ofFIG. 1. Here, the on-chip hybrid antenna device is implemented with anSOI technology, where the ground plane is integrated within the board orchip package 314. The embodiment 400 is essentially the same as that ofFIG. 3, except that an SOI antenna layer structure 401, such as theantenna layer structure formed in step 202 of the method 200, is formedat step 102 and is mounted on the ground plane structure or carrierlayer 314 at step 106. The antenna is integrated onto a medium-to-highresistivity substrate 420, for example, with a resistivity of about 100Ohm·cm to greater than 1 KOhm·cm, depending on the frequency oftransmission through the substrate 420. Further, the ground plane 312 isintegrated into the board 314, as discussed above with respect to FIG.3. The SOI chip is directly flip-chipped on the board at step 106. Thedimensions are the same as for the structure in FIG. 3. The siliconsubstrate 420 has a dielectric constant of ∈=11.9 and is lossy. Due tothe lossy properties of the substrate 420, this embodiment does not leadto an antenna efficiency as high as that of the embodiment of FIG. 3.

FIG. 5 illustrates another embodiment 500 in which a lens 522 isfabricated in the silicon substrate 420 of the SOI structure 401 of FIG.4, thereby forming the antenna structure 501 with the cap layer 520. Thelens 522 can be formed at step 102 of the method 100 by chemical orplasma etching. The dielectric lens 522 is configured to focus theincident electromagnetic wave 502 on the antenna and to improve itsdirectivity and receiver sensitivity. The diameter of the lens is can bebetween λ/8 and 2λ. Other than the lens 522 and the silicon substrate520, the device 500 is essentially the same as the devices 300 and 400of FIGS. 3 and 4, and can be formed as discussed above with respect tothe embodiment 400 of FIG. 4 with the addition of forming a lens atsteps 102/202. It should be noted that in this, and all otherembodiments, the antenna 306 can be configured to both receive andtransmit signals.

Referring now to FIG. 6, an alternative embodiment 600 of an antennadevice, which can also be fabricated in accordance with the method 100of FIG. 1, is illustratively depicted. Here, the on-chip hybrid antennadevice is implemented with a bulk semiconductor technology, where theground plane is integrated within the board or chip package 314. Similarto FIGS. 4 and 5, the antenna is integrated onto a medium-to-highresistivity substrate 620, for example, with a resistivity of about 100Ohm·cm to greater than 1 KOhm·cm that is dependent on the frequency oftransmission through the substrate 620. The embodiment 600 isessentially the same as that of FIG. 3, except that the antennas areformed at step 102 in a bulk semiconductor 620, such as silicon, asopposed to an SOI antenna structure 301, to form an antenna structure601. Step 104 can be implemented as discussed above and the antennastructure 601 can be mounted on the ground plane structure or carrierlayer 314 at step 106, as discussed above. Further, the ground plane 312is integrated into the board 314, as discussed above with respect toFIG. 3. The dimensions are the same as those in FIG. 3 to obtain the˜λ/4 to λ/20 spacing from the antenna(s) 306 to the ground plane 312.

With reference to FIG. 7, another embodiment 700 of an antenna device inaccordance with exemplary aspects of the present principles isillustratively depicted. The antenna device 700 of FIG. 7, like theantenna device of FIG. 3, is directed to a hybrid on-chip antenna devicewith one or more antennas integrated into an SOG structure and one ormore ground planes integrated within the board or chip package. Inparticular, the device 700 is essentially the same as that of FIG. 3except that the antenna structure 301 is not flip-chipped onto the chippackage 314 and connectors 310 and 316 are not used. Here, in the device700, the glass substrate 320 is directly bonded to the ground planestructure 314 and wire bonds 722 are mounted onto the semiconductor chip301 and are thereby connected to the antenna(s) 306, as illustrated inFIG. 7. The wire bonds 722 connect the chip 301 to the package 314 andprovide a signal/power and a ground to the antenna(s), as illustrated inFIG. 7. Thus, to manufacture the device 700, the methods 100 and 200 canbe performed as described above with respect to the device 300 of FIG.3, except that the glass substrate 320 of the antenna structure 301 isdirectly bonded to the ground plane structure 314 at step 106, that thewire bonds 722 are mounted on the antenna structure 301 at step 108 andthat the glass substrate 320 is optionally etched at step 102 and/orstep 206. As illustrated in FIG. 7, the wire bonds 722 are disposed on atop surface of the semiconductor chip 301 that opposes a side of thesemiconductor chip by which the semiconductor chip is mounted on thechip package 314. In addition, prior to attaching the glass substrate320 to the antenna chip layer, as discussed above, the glass substrate320 can be etched and dimensioned such that the ground plane(s) 312 isat a predetermined distance from the antenna(s) 306. As discussed above,the predetermined distance may about λ/4 to achieve an optimalreflection. However, the predetermined distance (d) can be between

${\frac{1}{20}\lambda} < d \leq {\frac{1}{4}\lambda}$to achieve a relatively high efficiency, as noted above. Use of the highresistivity, highly transparent material 320 in this way can reducesignal losses that would otherwise occur if a semiconductor substratewere used instead of the high resistivity material 320. For example, theuse of material 320 can reduce signal losses that may otherwise occur asa result of reflections of the signal through the semiconductorsubstrate from the ground plane(s) 312.

FIG. 8 illustrates an alternative embodiment 800 in which the hybridantenna structure 815 is composed of an on-chip antenna(s) 306integrated into an SOG structure and a ground plane(s) 312 integratedwithin another chip. 3-D chip integration technology can be employed tofabricate this embodiment. Here, in the example illustrated in FIG. 8,the chip 815 is connected by using connectors 810 and 808, which can beC4 pillars or micro-bumps, and using a Through-Silicon Via (TSV) or aThrough-Glass Via (TGV) 802. The dimensions and SOG processing areessentially the same as for the structure 300 in FIG. 3. In addition,the antenna device 800 can be fabricated by performing the method 100 ofFIG. 1 discussed above.

For example, referring again specifically to FIGS. 1 and 2, withcontinuing reference to FIG. 8, the method 100 can begin by forming thestructure 301 in accordance with step 102 and the method 200, asdiscussed above with respect to the device 300 of FIG. 3, where thesubstrate 834 can be a glass substrate 320. Alternatively, the substrate834 can be composed of silicon with a dielectric constant of ∈_(r)=4.Here, the antenna structure 801 can be an SOI structure and can beformed as discussed above, for example, with respect to the SOIstructure 301 of FIG. 3. Alternatively, the antenna structure 814 can beformed in bulk silicon, as discussed above, for example, with respect toantenna layer structure 601 of FIG. 6. Thus, in this case, the insulatorlayer 318 can be omitted.

At step 104, the ground plane structure 814 can be fabricated inaccordance with a method 900 that is similar to the method 200 of FIG.2. For example, a flow diagram of a method 900 for forming a groundplane structure 814 is illustratively depicted in FIG. 9. Here, themethod 900 can begin at step 902, at which one or more antennas areformed in a ground layer structure. As illustrated in FIG. 8, one ormore ground planes 312 can be formed in a silicon-on-insulator (SOI)structure, which includes an insulator layer 805 and a semiconductorsubstrate, such as a silicon substrate (not shown). Further, the groundplane 312 can be insulated with a dielectric material 832, with, forexample, a dielectric constant of 2≦∈_(r)≦3.9. The ground planestructure 814 also includes antenna device components 804 of an activedevice of an SOI structure. As discussed above, with respect to the FIG.3 embodiment, the SOI structure can be transferred onto a glasssubstrate to form a Silicon On Glass (SOG) structure.

For example, at step 904, the ground structure formed in step 902 can bemounted onto a transparent support structure. For example, the SOI chipor wafer can be attached to a mechanical support wafer using a polymerglue that is sensitive to a certain light wavelength λ_(polymer). Themechanical support wafer used is transparent at the light wavelengthλ_(polymer), as discussed above with respect to FIG. 2.

At step 906, at least part of the substrate material can be etched toform ground chip layer or a ground wafer layer. For example, the chipback-side substrate (not shown in FIG. 8) of a single chip or multiplechips on a wafer can be etched away using mechanical polishing/etchingand/or chemical etching and/or plasma etching, as discussed above withrespect to FIG. 2. As noted above, an advantage of using an SOIstructure is that the silicon chemical or plasma etching is veryselective with respect to SiO₂ of the insulator layer 805, enabling theetching process to be stopped automatically at the appropriate distancewithout damaging the active devices 804 integrated into the silicon filmand isolated from the substrate by the SiO₂ box 805.

At step 908, the ground chip layer or the ground wafer layer can beattached to a transparent wafer 830. For example, the chip or wafer thatis attached to the mechanical support wafer is then attached to atransparent wafer, such as glass, as discussed above with respect toFIG. 2. The transparent wafer 830 can be glass with a dielectricconstant of ∈_(r)=4.

At step 910, the transparent support structure can be released from theground chip layer. For example, the mechanical support can be releasedfrom the circuit or wafer by illuminating the support and polymeradhesive with a light having a wavelength λ_(polymer) to which theadhesive is sensitive, as discussed above with respect to FIG. 2. Asindicated above, FIG. 8 illustrates an example of the resulting groundplane structure 814 that can be formed in accordance with the method900.

It should also be noted that the substrate 830 in alternativeembodiments can be composed of silicon with a dielectric constant of∈_(r)=11.9. Here, the ground plane structure 814 can be an SOI structureand can be formed as discussed above, for example, with respect to theSOI structure 401 of FIG. 4. Alternatively, the ground plane structure814 can be formed in bulk silicon, as discussed above, for example withrespect to antenna layer structure 601 of FIG. 6. Thus, in this case,the insulator layer 805 can be omitted.

Returning to the method 100, the method may proceed to step 106, atwhich the antenna structure 801 can be mounted to the ground planestructure 814. It should be noted that layer 834 can be etched anddimensioned at step 102 and/or layer 832 can be etched and dimensionedat step 104 to ensure that the ground plane(s) 312 is at a predetermineddistance from the antenna(s) 306. As discussed above, the predetermineddistance (d) can be between

${\frac{1}{20}\lambda} < d \leq {\frac{1}{4}\lambda}$to achieve a relatively high efficiency, and is preferably about λ/4.

At step 108, a via 802, such as a TGV or a TSV, can be formed in thestructures 801 and 814, as illustrated in FIG. 8. As also illustrated inFIG. 8, the via 802 electrically couples the chip 801 and the chippackage 820 through the chip 814. In addition, the hybrid antenna chip815 can be flip-chipped to the chip package 820 using a C4 or Cu pillarprocess. For example, the chip can be mounted to the chip package 820,which can be a printed circuit board, with a connector 810 and aconnector 808 providing power and a signal to the antenna(s) 306. Itshould be noted that a single ship or a full wafer can be mounted to thechip package 820 through connectors 808 and 810, which can permitwafer-scale integration of large phase array chips and antennas. Inaccordance with various embodiments, the connectors 810 and 808 can, forexample, be electrically conductive connectors, such as, for example, C4or Cu pillar connectors.

With reference now to FIG. 10, a top view of a wafer-scale antennasystem 1000 with a large antenna array in accordance with an exemplaryembodiment is illustratively depicted. Here, the system 1000 cancomprise a wafer 1002, which is illustrated as outline 1002. The wafer1002 includes a plurality of antenna devices 1006, each of whichincludes one or more chips 1008, which in turn can include one or moreantennas 306, and one or more ground planes 312. Each of the antennadevices 1006 can be, for example, the antenna device 300, the antennadevice 400, the antenna device 500 or the antenna device 600 describedabove with respect to FIGS. 3, 4, 5 and 6, respectively, where the chips1008 can be chips 301, 401, 501 or 601. The wafer 1002 can be flip-chipbonded to a chip package 1004, which, as noted above can be a printedcircuit board. The chip package 1004 can be a chip package that iscommon to all of the devices 1006. Thus, the chip package 1004 can beone large package of which the chip packages 314, in which the groundplanes are integrated, as discussed above, are apart. In accordance withone exemplary aspect, as indicated above, the wafer 1002 can be attachedto the package 1004 using C4 or micro-bump packaging technology. Thispermits the scaling of the antenna devices to the wafer level, enablingthe use of hundreds of antennas in a single system, and even thousands,depending on the frequency employed. Accordingly, a hybrid integrationof a large number of antennas and transceivers can be implemented tobuild a large antenna array. A typical wafer dimension is between 200 mmand 300 mm in the width and/or length of the wafer 1002 in the top viewshown in FIG. 10. However, any wafer dimension can be used in accordancewith various embodiments of the present principles.

It should be noted that the transmissions described herein preferablyhave a milliwave wavelength or less, for example, frequencies ofapproximately 60 GHz to 1 THz. However, the antenna devices can beadapted for transmissions with other frequencies, such as RF, inaccordance with the dimensions described above with respect to thewavelength of the transmitted waves.

The hybrid antenna integration described herein allows for flexibly inchanging the distance between the antenna(s) and ground plane(s) toprovide for the design of broadband antennas. In particular, thestructure enables the implementation of an optimal spacing between theground plane and the antenna(s) to maximize in-phase reflection andthereby improve efficiency.

Having described preferred embodiments of hybrid on-chip and packageantenna devices, systems and methods of their fabrication (which areintended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

What is claimed is:
 1. An antenna device comprising: a semiconductorchip including at least one antenna integrated into a dielectric layerof the semiconductor chip and configured to transmit electromagneticwaves; and a chip package on which said semiconductor chip is mounted,wherein the chip package includes at least one ground plane that isentirely enclosed solid dielectric material within the chip package thatis disposed at a predetermined distance from the at least one antenna toimplement a reflection of at least a portion of the electromagneticwaves by the at least one ground plane, wherein the electromagneticwaves have a microwave or lower wavelength (λ), wherein said distance(d) is between ${\frac{1}{20}\lambda} < d \leq {\frac{1}{4}{\lambda.}}$2. The antenna device of claim 1, wherein said distance is about λ/4. 3.The antenna device of claim 1, further comprising: at least oneconnector by which said semiconductor chip is mounted on said chippackage, wherein the at least one connector is dimensioned such that theat least one ground plane is at the predetermined distance from the atleast one antenna.
 4. The antenna device of claim 1, wherein the atleast one connector is electrically conductive to provide at least oneof a ground, a signal or power.
 5. The antenna device of claim 4,wherein the at least one connector comprises at least one of C4 or Cupillar connectors.
 6. The antenna device of claim 1, wherein said chippackage is a printed circuit board.
 7. The antenna device of claim 1,wherein the semiconductor chip is a silicon on glass (SOG) structure. 8.The antenna device of claim 7, wherein the semiconductor chip comprisesa glass substrate that is disposed above the at least one antenna on aside of the semiconductor chip that opposes a side of the semiconductorchip by which the semiconductor chip is mounted on the chip package. 9.The antenna device of claim 7, wherein a glass substrate of the SOGstructure is directly coupled to the chip package and is dimensionedsuch that the at least one ground plane is at the predetermined distancefrom the at least one antenna.
 10. The antenna device of claim 9,further comprising a wire bond disposed on a top surface of thesemiconductor chip that opposes a side of the semiconductor chip bywhich the semiconductor chip is mounted on the chip package.
 11. Theantenna device of claim 1, wherein the semiconductor chip is a siliconon insulator (SOI) structure.
 12. The antenna device of claim 1, whereinthe semiconductor chip comprises a lens in a silicon substrate disposedabove the at least one antenna on a side of the semiconductor chip thatopposes a side of the semiconductor chip by which the semiconductor chipis mounted on the chip package, wherein said lens is configured to focusreceived electromagnetic waves to said at least one antenna.
 13. Amethod for fabricating an antenna device for microwave transmissionscomprising: forming an antenna structure comprising at least one antennaintegrated into a dielectric layer of a semiconductor chip andconfigured to transmit electromagnetic waves having a microwavewavelength (λ); forming a ground plane structure separately from saidantenna structure, wherein the ground plane structure comprises at leastone integrated ground plane enclosed in its entirety in solid dielectricmaterial within a chip package that is configured to reflect theelectromagnetic waves; and mounting said antenna structure to saidground plane structure such that the at least one ground plane is at adistance (d) of ${\frac{1}{20}\lambda} < d \leq {\frac{1}{4}\lambda}$from the at least one antenna.
 14. The method of claim 13, wherein theground plane structure is a printed circuit board.
 15. The method ofclaim 13, wherein the antenna structure comprises a glass substrate thatis disposed above the at least one antenna on a side of the antennastructure that opposes a side of the antenna structure by which theantenna structure is mounted on the ground plane structure.
 16. Themethod of claim 13, wherein the semiconductor chip is a first chip,wherein the ground plane structure is a second chip, wherein the firstchip and second chip are mounted on a circuit board and wherein thecircuit board and the first chip are electrically connected through thesecond chip with at least one of a through silicon via (TSV) or athrough glass via (TGV).
 17. An antenna system comprising: a pluralityof semiconductor chips on a wafer, wherein each of the semiconductorchips includes at least one antenna that is integrated into a dielectriclayer of the semiconductor chip and is configured to transmitelectromagnetic waves; and a wafer-scale chip package on which saidwafer and said plurality of semiconductor chips are mounted, wherein thechip package includes ground planes integrated enclosed in its entiretyin solid dielectric material within the wafer-scale chip package thatare disposed at predetermined distances from the antennas of thesemiconductor chips to implement a reflection of at least a portion ofthe electromagnetic waves by the ground planes.